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Selected Category: Semiconductors, Development Tools Remove
Selected Suppliers: EPC Remove IXYS-RF Remove

Silicon Carbide Schottky Diode

IXYS-RF Silicon Carbide Schottky Diode

Supplier: IXYS-RF

Subtitle: Silicon Carbide Schottky Diode
Description: IXYS' Silicon Carbide diodes provide extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with the low inductance DE-Series RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency con...

Category: Semiconductors, Development ToolsDiscrete SemiconductorsDiodes, RectifiersDiodes - ArraysSilicon Carbide Schottky

GaNFET (Gallium Nitride)

EPC GaNFET (Gallium Nitride)

Supplier: EPC

Subtitle: Enhancement Mode Power Transistors
Description: EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.

Category: Semiconductors, Development ToolsDiscrete SemiconductorsTransistors, FETs, IGBTsFETs SingleN-ChannelGaNFET (Gallium Nitride)

N-Channel Logic Level Gate FETs

EPC N-Channel Logic Level Gate FETs

Supplier: EPC

Subtitle: Enhancement Mode Power Transistors
Description: EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.

Category: Semiconductors, Development ToolsDiscrete SemiconductorsTransistors, FETs, IGBTsFETs SingleN-ChannelLogic Level Gate

N-Channel MOSFET (Metal Oxide)

IXYS-RF N-Channel MOSFET (Metal Oxide)

Supplier: IXYS-RF

Subtitle: N-Channel MOSFET (Metal Oxide)
Description: IXYS-RF offers a power module in a SMD outline with all the advantages of flexibility, automated assembly and reduced package size. With one of the lowest height profiles in the market, it also fulfills the demand for total size reduction and therefore facilitates system cost reduction requireme...

Category: Semiconductors, Development ToolsDiscrete SemiconductorsTransistors, FETs, IGBTsFETs SingleN-ChannelMOSFET (Metal Oxide)

N-Channel Standard FETs

EPC N-Channel Standard FETs

Supplier: EPC

Subtitle: Enhancement Mode GaN Power Transistors
Description: EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market.

Category: Semiconductors, Development ToolsDiscrete SemiconductorsTransistors, FETs, IGBTsFETs ArraysN-ChannelStandard

RF MOSFETs

IXYS-RF RF MOSFETs

Supplier: IXYS-RF

Subtitle: RF Power MOSFET
Description: IXYS-RF offers N-Channel enhancement mode RF Power MOSFETs that are optimized for RF and high speed switching.

Category: Semiconductors, Development ToolsDiscrete SemiconductorsTransistors, FETs, IGBTsRF FETsMOSFET

High-Side

IXYS-RF IXZ631DF18N50

Supplier: IXYS-RF

Subtitle: Power Management External MOSFET, High Side Bridge Driver
Description: These high side bridge drivers are high voltage, high speed power MOSFET and insulated gate bipolar transistor (IGBT) drivers. Proprietary common mode design techniques provide stable operation in high dV/dt noise environments. An on-board comparator can be used to detect an overcurrent condition...

Category: Semiconductors, Development ToolsPower ManagementGate DriversHigh-Side

Full, Half-Bridge Drivers

EPC Full, Half-Bridge Drivers

Supplier: EPC

Subtitle: Power Management Full, Half-Bridge Drivers
Description: EPC offers full, half-bridge drivers for highly resonant and inductive wireless power and high frequency DC-DC conversion.

Category: Semiconductors, Development ToolsPower ManagementFull, Half-Bridge Drivers

33W Class 4 Wireless Power Kit

EPC EPC9129

Supplier: EPC

Subtitle: EPC9129 - 33W Class 4 Wireless Power Kit
Description: The EPC9129 wireless power demonstration system is a high efficiency, AirFuel™ Alliance compatible, wireless power transfer demonstration kit capable of delivering up to 33 W into a transmit coil while operating at 6.78 MHz. The popularity of highly resonant wireless power transfer is increasing ...

Category: Semiconductors, Development ToolsProgrammers, Development SystemsEvaluation BoardsEvaluation, Demo Boards, KitsPower Management

EPC2001 Development Board EPC9013

EPC EPC9013

Supplier: EPC

Subtitle: EPC9013 Development Board using the EPC2001 100V Enhancement Mode (eGaN®) Field Effect Transistor (FET)
Description: The EPC9013 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation pro...

Category: Semiconductors, Development ToolsProgrammers, Development SystemsEvaluation BoardsEvaluation, Demo Boards, KitsPower Management