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EPC8002 N-Channel 65V 2A (Ta) Surface Mount Die
Price & Procurement
24,982 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 2.28000 € 2.28
10 2.05200 € 20.52
25 1.94000 € 48.50
100 1.55180 € 155.18
500 1.37936 € 689.68
1,000 1.18108 € 1.181.08

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : 917-1118-2-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 22,500 - Immediate
  • Unit Price: € 1.16384
  • Digi-Reel®  : 917-1118-6-ND
  • Minimum Quantity: 1
  • Quantity Available: 24,982 - Immediate
  • Unit Price: Digi-Reel®

EPC8002

Datasheet
Digi-Key Part Number 917-1118-1-ND
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Manufacturer

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Manufacturer Part Number EPC8002
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Description GANFET TRANS 65V 2.7A BUMPED DIE
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 65V 2A (Ta) Surface Mount Die

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Customer Reference
Documents & Media
Datasheets EPC8002
eGaN® FET Brief
Product Training Modules eGaN® FET Reliability
Video File Texas Instruments/Wurth/EPC GaN Solutions First Look Video
Reference Design Library EPC9022: 1.6A, 0 ~ 28V, Half H-Bridge
PCN Assembly/Origin Mult Dev Site Add 28/Aug/2020
HTML Datasheet eGaN® FET Brief
Product Attributes
Type Description Select All
Categories
Manufacturer EPC
Series eGaN®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 32.5V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 917-1118-1