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STQ2HNK60ZR-AP N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0.80000 € 0.80
10 0.70300 € 7.03
100 0.54230 € 54.23
500 0.40170 € 200.85
1,000 0.32136 € 321.36

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-12344-1-ND
Copy   497-12344-1-ND
Quantity Available 9,308
Can ship immediately
Manufacturer

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Manufacturer Part Number

STQ2HNK60ZR-AP

Copy   STQ2HNK60ZR-AP
Description MOSFET N-CH 600V 0.5A TO-92
Copy   MOSFET N-CH 600V 0.5A TO-92
Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3

Copy   N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
Documents & Media
Datasheets STx2HNK60Z(x)
Other Related Documents STQ2HNK60ZR-AP View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
Simulation Models STQ2HNK60ZR-AP Spice Model
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names 497-12344-1

00:08:58 1/19/2019