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SI7460DP-T1-GE3 N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Price & Procurement
66,738 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1.62000 € 1.62
10 1.45400 € 14.54
100 1.16890 € 116.89
500 0.96034 € 480.17
1,000 0.79571 € 795.71

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI7460DP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 63,000 - Immediate
  • Unit Price: € 0.71925
  • Digi-Reel®  : SI7460DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 66,738 - Immediate
  • Unit Price: Digi-Reel®

SI7460DP-T1-GE3

Datasheet
Digi-Key Part Number SI7460DP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7460DP-T1-GE3
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Description MOSFET N-CH 60V 11A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7460DP
Video File MOSFET Technologies for Power Conversion
Catalog Page 1403 (EU2011-EN PDF)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7460DP-T1-GE3CT