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SI7852ADP-T1-GE3 N-Channel 80V 30A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
10,637 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1.66000 € 1.66
10 1.48800 € 14.88
100 1.19540 € 119.54
500 0.98214 € 491.07
1,000 0.81378 € 813.78

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Alternate Package
  • Tape & Reel (TR)  : SI7852ADP-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: € 0.73559
  • Digi-Reel®  : SI7852ADP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 10,637 - Immediate
  • Unit Price: Digi-Reel®

SI7852ADP-T1-GE3

Datasheet
Digi-Key Part Number SI7852ADP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7852ADP-T1-GE3
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Description MOSFET N-CH 80V 30A PPAK SO-8
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Manufacturer Standard Lead Time 35 Weeks
Detailed Description

N-Channel 80V 30A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7852ADP
Video File MOSFET Technologies for Power Conversion
Catalog Page 1403 (EU2011-EN PDF)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1825pF @ 40V
FET Feature -
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7852ADP-T1-GE3CT