Alliance Memory, Inc.

AS4C8M16S-7BCN and AS4C16M16S-7BCN High-Speed CMOS SDRAMs

Alliance Memory's 256 MB SDRAMs are high-speed CMOS synchronous DRAMs containing 128 Mbits and 256 Mbits

Image of Alliance Memory AS4C8M16S-7BCN and AS4C16M16S-7BCN CMOS SDRAMsAlliance Memory's AS4C8M16S-7BCN and AS4C16M16S-7BCN high-speed CMOS synchronous DRAMs (SDRAM) feature densities of 128 MB and 256 MB, respectively, in a 54-ball 8 mm x 8 mm x 1.2 mm TFBGA package. The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions.

Features
  • Fast access time from clock down to 4.5 ns at a 5 ns clock
  • Fast clock rates of 143 MHz
  • Internally configured as four banks of 2 M word x 16-bits (AS4C8M16S-7BCN) and 4 M word x 16-bits (AS4C16M16S-7BCN) with a synchronous interface
  • Programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Single +3.3 V (± 0.3 V) power supply
  • Lead (Pb)- and halogen-free
Applications
  • Medical, industrial, automotive, and telecom applications requiring high memory bandwidth
  • High-performance PC applications

AS4C16M16S Series

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IC DRAM 256MBIT PAR 54TFBGAAS4C16M16S-7BCNIC DRAM 256MBIT PAR 54TFBGA0 - Immediate$2.75View Details

AS4C8M16S Series

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IC DRAM 128MBIT PAR 54TFBGAAS4C8M16S-7BCNIC DRAM 128MBIT PAR 54TFBGA0 - Immediate$2.48View Details
Published: 2016-02-24