HEXFET® Power MOSFETs

Infineon Technologies' logic level gate drive trench HEXFET power MOSFETs feature benchmark on-state resistance (R_DS(ON)) and high package current ratings for high power DC motors, power tools, industrial batteries and power supply applications. Utilizing Infineon Technologies' latest trench technology, this family of benchmark MOSFETs offers a low R_DS(ON) at 4.5 V_GS to significantly improve thermal efficiency. Additionally, the devices’ higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. With a package current rating of up to 195 A, the TO-220 package delivers more than 60% improvement over typical package ratings.