ROHM Semiconductor

BSM300D12P2E001 SiC Power Module

ROHM offers its BSM300D12P2E001 half-bridge module consisting of SiC-DMOSFET and SiC-SBD

Image of ROHM Semiconductor's BSM300D12P2E001 SiC Power ModuleIn addition to 120 A and 180 A full SiC power modules, ROHM offers a 300 A type (BSM300D12P2E001) that enables support for larger power applications such as high capacity power supplies industrial equipment. Moreover, significantly reduced switching loss (compared with conventional Si IGBT modules) makes high-frequency operation possible, ensuring compatibility with smaller peripheral components and cooling systems.

Features Applications
  • Low surge, low switching loss
  • High-speed switching possible
  • Reduced temperature dependence
  • Motor drive
  • Inverter, converter
  • Photovoltaics, wind power generation
  • Induction heating equipment

BSM300D12P2E001 SiC Power Module

ImageManufacturer Part NumberDescriptionFET FeatureDrain to Source Voltage (Vdss)Available QuantityPriceView Details
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE-1200V (1.2kV)16 - Immediate$644.20View Details
Published: 2016-04-04

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