STMicroelectronics

STL12N10F7 STripFET™ F7 Power MOSFET

STMicroelectronics’ STL12N10F7 utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance

Image of STMicroelectronics' STL12N10F7 STripFET™ F7 Power MOSFETSTMicroelectronics’ STL12N10F7 N-channel 100 V, 11.3 mΩ typical, 12 A power MOSFET in a PowerFLAT™ 3.3 x 3.3 package utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Among the lowest RDS(ON) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
Published: 2018-10-09