Name: IPAN65R650CEXKSA1
Brand: Infineon Technologies
SKU: IPAN65R650CEXKSA1-ND
Price: 1.7097 EUR
Availability: InStock

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IPAN65R650CEXKSA1
DigiKey Part Number	IPAN65R650CEXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPAN65R650CEXKSA1
Description	MOSFET N-CH 650V 10.1A TO220
Customer Reference
Detailed Description	N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet	Datasheet
EDA/CAD Models	IPAN65R650CEXKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack
Base Product Number	IPAN65

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In-Stock: 14

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Last Time Buy Date: 30/09/2026

Quantity

All prices are in EUR

Tube