Name: IPD80R1K4CEATMA1
Brand: Infineon Technologies
SKU: IPD80R1K4CEATMA1TR-ND
Price: 2.3493 EUR
Availability: InStock

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IPD80R1K4CEATMA1
DigiKey Part Number	IPD80R1K4CEATMA1TR-ND - Tape & Reel (TR) IPD80R1K4CEATMA1CT-ND - Cut Tape (CT) IPD80R1K4CEATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD80R1K4CEATMA1
Description	MOSFET N-CH 800V 3.9A TO252-3
Customer Reference
Detailed Description	N-Channel 800 V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD80R1K4CEATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.9V @ 240µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Series CoolMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V
Part Status Not For New Designs	Power Dissipation (Max) 63W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPD80R1
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V