Name: IQE050N08NM5CGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQE050N08NM5CGSCATMA1TR-ND
Price: 3.8991 EUR
Availability: InStock

N-Channel 80 V 16A (Ta), 99A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-WHTFN-9-1

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IQE050N08NM5CGSCATMA1
cms-digikey-product-number	448-IQE050N08NM5CGSCATMA1TR-ND - Tape & Reel (TR) 448-IQE050N08NM5CGSCATMA1CT-ND - Cut Tape (CT) 448-IQE050N08NM5CGSCATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	IQE050N08NM5CGSCATMA1
cms-description	OPTIMOS LOWVOLTAGE POWER MOSFET
cms-standard-lead-time	61 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 80 V 16A (Ta), 99A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-WHTFN-9-1
Datasheet	Datasheet
cms-eda-cad-models	IQE050N08NM5CGSCATMA1 Models

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cms-category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 3.8V @ 49µA
Series OptiMOS™ 5	Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 40 V
FET Type N-Channel	Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 80 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 99A (Tc)	Supplier Device Package PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Package / Case 9-PowerWDFN