Name: IXTA1R6N100D2HV
Brand: IXYS
SKU: 238-IXTA1R6N100D2HV-ND
Price: 7.995 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTA1R6N100D2HV
DigiKey Part Number	238-IXTA1R6N100D2HV-ND
Manufacturer	IXYS
Manufacturer Product Number	IXTA1R6N100D2HV
Description	MOSFET N-CH 1000V 1.6A TO263HV
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel, Depletion Mode 1000 V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.5V @ 100µA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Series Depletion	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 10 V
Part Status Active	Power Dissipation (Max) 100W (Tc)
FET Type N-Channel, Depletion Mode	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 1000 V	Supplier Device Package TO-263HV
Current - Continuous Drain (Id) @ 25°C 1.6A (Tj)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 0V	Base Product Number IXTA1
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V