Name: IXTY1R6N100D2
Brand: IXYS
SKU: 238-IXTY1R6N100D2-ND
Price: 4.92 EUR
Availability: OutOfStock

IXTY1R6N100D2 is out of stock and can be placed on backorder.

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Alpha & Omega Semiconductor Inc.

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IXTY1R6N100D2
DigiKey Part Number	238-IXTY1R6N100D2-ND
Manufacturer	IXYS
Manufacturer Product Number	IXTY1R6N100D2
Description	MOSFET N-CH 1000V 1.6A TO252
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel, Depletion Mode 1000 V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet
EDA/CAD Models	IXTY1R6N100D2 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	Depletion
Packaging	Tube
Part Status	Active
FET Type	N-Channel, Depletion Mode
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IXTY1