Name: TPN1200APL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TPN1200APLL1QTR-ND
Price: 1.3776 EUR
Availability: OutOfStock

N-Channel 100 V 40A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN1200APL,L1Q
DigiKey Part Number	264-TPN1200APLL1QTR-ND - Tape & Reel (TR) 264-TPN1200APLL1QCT-ND - Cut Tape (CT) 264-TPN1200APLL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN1200APL,L1Q
Description	PB-F POWER MOSFET TRANSISTOR TSO
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 40A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V
Mfr Toshiba Semiconductor and Storage	Vgs(th) (Max) @ Id 2.5V @ 300µA
Series U-MOSIX-H	Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1855 pF @ 50 V
FET Type N-Channel	Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 40A (Tc)	Supplier Device Package 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case 8-PowerVDFN