OSI Optoelectronics

InGaAs Series Photodiodes

OSI Optoelectronics’ large active-area devices are for use in infrared instrumentation and monitoring applications

Image of OSI Optoelectronics InGaAs Series PhotodiodeOSI Optoelectronics's FCI-InGaAs-XXX-X series is part of the large active-area IR sensitive detectors which exhibit excellent responsivity from 1100 nm to 1620 nm, allowing high sensitivity to weak signals. These large active-area devices are available in active area sizes of 1 µm, 1.5 µm, and 3 µm, and are ideal for use in infrared instrumentation and monitoring applications. The photodiode chips are isolated in TO-46 or TO-5 packages with a broadband double-sided AR coated flat window. The FCI-InGaAs-3000-X comes with different shunt resistance values of 5 MΩ, 10 MΩ, 20 MΩ, and 40 MΩ.

Features

FCI-InGaAs-1500
  • Package: TO-46
  • Active area diameter: 1.5 µm
FCI-InGaAs-3000-X
  • Package: TO-5
  • Active area diameter: 3 µm
Features
  • High response
  • Large area diameter
  • Low noise
  • Spectral range 900 nm to 1700 nm
  • Hermetic TO packages
Applications
  • Optical instrumentation
  • Power measurement
  • IR sensing
  • Medical devices

InGaAs Photodiodes

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SENSOR PHOTODIODE 1550NM TO46-3FCI-INGAAS-1500SENSOR PHOTODIODE 1550NM TO46-369 - Immediate$98.62View Details
SENSOR PHOTODIODE 1550NM 3MM TO5FCI-INGAAS-3000-20SENSOR PHOTODIODE 1550NM 3MM TO50 - Immediate$190.06View Details
Published: 2020-12-16