MOS8 products have polysilicon gates which tailor the switching of the devices. This gives an advantage over MOS7 by being able to control the rise and fall time, thereby minimizing oscillations. Also, as power levels increase, many designers parallel devices. In order to allow optimum parallel operation, these devices have been tuned by maximizing the product of the input capacitance (Ciss) and the reverse transfer capacitance (Crss). Furthermore, tight threshold control (Vth) also helps with the ability to parallel the devices. Additionally, being a planar technology, large die sizes help to maintain “cooler” operation as power levels increase. In MOSFETs, ON resistance has a positive temperature coefficient (PTC) whereas threshold control has a negative temperature coefficient (NTC). This means that as temperature increases, ON resistance increases and threshold decreases. Ultimately maintaining a tight threshold control between paralleled devices is important so one does not turn ON before the other.