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MOS8-Slide6

The MOS8 IGBTs include 600V and 900V punch through (PT) IGBTs. A punch through IGBT has an additional buffer layer that allows quicker recombination of the minority carriers. This keeps the known “current tail” of the device to a minimum, allowing a higher frequency of operation. The IGBTs have a low saturation voltage (Vce(sat)) which minimizes conduction or DC losses as well as having the fast/soft switching similar to the MOS8 MOSFETs and FREDFETs. The combination of a low saturation voltage and soft switching makes these devices reliable and high performing.

PTM Published on: 2010-10-16