This chart breaks down where the Microsemi's switching devices fit depending on the application. For low frequency high current applications, an IGBT is used due to the fact that the ON state voltage of an IGBT is lower than that of a MOSFET. Also, there is a cost savings due to IGBTs having a higher current density than MOSFETs which results in a smaller die and more die per wafer. As the frequency increases between 25kHz and 125kHz a combination of MOSFETs/FREDFETs and IGBTs can be solutions, again, depending on the application, multiple devices can be suggested that allow the designer to test and decide which works better in their system. Anything above 125kHz will be MOSFETs. This is because MOSFETs are voltage controlled devices, versus current controller devices (IGBTs), which turn off quicker and can operate at higher frequencies. The only other time when a MOSFET would be preferred is at a low frequency when the current is below 10A since, at low current, IGBTs have a minimum conduction loss of 0.7V due to the series diode in the IGBT where at zero current the MOSFET goes to zero conduction losses.